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32. R. A. Morrow, 'Establishment of an effective-mass Hamiltonian for abrupt heterojunctions', Phys. Rev. B, 35:8074, 1987. 33. Ch. Schnittler and M. Kirilov, 'Hamiltonian and boundary conditions for electrons in semiconductor heterostructures',phys. stat. sol. (b), 176:143, 1993. 34. J. Khurgin, 'Novel configuration of self-electro-optic effect device based on asymmetric quantum wells', Appl. Phys. Lett., 53:779, 1988. 35. Masahiko Morita, Katsuyuki Goro, and Takeo Suzuki, 'Quantum-confined Stark effect in stepped-potential wells', Japanese J. Appl. Phys., 29:L1663, 1990. 36. N. Susa and T. Nakahara, 'Large blue shifts induced by Stark effect in asymmetric coupled quantum well', Electronics Letters, 28:941, 1992. 37. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, 'Band-edge electroabsorption in quantum well structures - the quantumconfined stark-effect', Phys. Review Letters, 53:2173-2176, 1984. 38. Milton Abramowitz and Irene A. Stegun, Handbook of Mathematical Functions, Dover Publications Inc., New York, 1965. 39. S. Vatannia and G. Gildenblat, 'Airy's function implementation of the transfer-matrix method for resonant tunneling in variably spaced finite superlattices', IEEE Journal of Quantum Electronics, 32:1093, 1996. 40. M. P. Halsall, J. E. Nicholls, J. J. Davies, B. Cockayne, and P. J. Wright, 'CdS/CdSe intrinsic stark superlattices', J. Applied Phys., 71:907-915, 1992. 41. L. Friedman, R. A. Soref, and G. Sun, 'Quantum parallel laser: A unipolar superlattice interminiband laser', IEEE Photonics Technology Letters, 9:593-595, 1997. 42. G. Scamarcio, F. Capasso, J. Faist, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, 'Tunable interminiband infrared emission in superlattice electron transport', Applied Phys. Letters, 70:1796-1798, 1997. 43. G. Scamarcio, F. Capasso, C. Sirtori, J. Faist, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, 'High-power infrared (8-micrometer wavelength) superlattice lasers', Science, 276:773-776, 1997. 44. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, Second edition, 1981. 45. D. K. Ferry, Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, IOP Publishing, London, 1995. 46. S. Datta, Quantum Phenomena, vol. Volume VHI of Modular Series on Solid State Devices, Addison-Wesley, New York, 1989. 47. S. Luyri, High speed semiconductor devices, p. 399, Wiley-Interscience, New York, 1990. 48. J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, 'Resonant tunnelling diodes:Models and properties', Proceedings of the IEEE, 86:639,1998. 49. Hiroshi Mizuta and Tomonori Tanoue, The Physics and Applications of Resonant Tunnelling Diodes, Cambridge University Press, Cambridge, 1995. 50. J. K. Furdyna, ', J. Appl. Phys., 64:R29, 1988. 51. J. A. Gaj, Diluted Magnetic Semiconductors, vol. 25, chapter 7, Academic, Boston, 1988.
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52. N. Malkova and U. Ekenberg, 'Spin properties of quantum wells with magnetic barriers. I. A k.p analysis for structures with normal band ordering', Phys. Rev., 66:155324, 2002. 53. T. Wenckebach, Essentials of Semiconductor Physics, John Wiley and Sons, Ltd., Chichester, 1999. 54. I. Savic, V. Milanovic, Z. Bconic, D. Indjin, V. Jovanovic, and P. Harrison, 'Dilute magnetic semiconductor quantum-well structures for magnetic field tunable farinfrared/Terahertz absorption', IEEE J. Quan. Elec., 40:1614 1621, 2004. 55. R. L. Liboff, Introductory Quantum Mechanics, Addison Wesley, San Francisco, Fourth edition edition, 2003. 56. R. Turton, The Physics of Solids, Oxford University Press, Oxford, 2000. 57. A. R. Sugg and J-P. C. Leburton, 'Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique', IEEE Journal of Quantum Electronics, 27:224, 1991. 58. J. P. Killingbeck, Microcomputer Algorithms, Hilger, Bristol, 1992. 59. E. H. Li, 'Interdiffusion as a means of fabricating parabolic quantum wells for the enhancement of the nonlinear third-order susceptibility by triple resonance', Applied Phys. Letters, 69:460 462, 1996. 60. S. Fliigge, Practical Quantum Mechanics, Springer-Verlag, Berlin, 1970. 61. T. Stirner, 'Notes on the Poschl Teller potential hole', unpublished. 62. S. R. Jackson, J. E. Nicholls, W. E. Hagston, P. Harrison, T. Stirner, J. H. C. Hogg, B. Lunn, and D. E. Ashenford, 'Magneto-optical study of exciton binding energies band offsets and the role of interface potentials in CdTe/Cd1 xMnxTe multiple quantum wells', Phys. Rev. B, 50:5392-5403, 1994. 63. F. Schwabl, Quantenmechanik, Springer, Berlin, 1990. 64. Y. Hirayama, J. H. Smet, L. H. Peng, C. G. Fonstad, and E. P. Ippen, 'Feasibility of 1.55 mu-m intersubband photonic devices using ingaas/alas pseudomorphic quantumwell structures', Japanese J. Applied Phys. Part 1-Regular Papers Short Notes & Review Papers, 33:890 895, 1994. 65. H. Asai and Y. Kawamura, 'Intersubband absorption in Ino.53Gao.47As/Ino.52Alo.4sAs multiple quantum-wells', Phys. Review B-CondensedMatter, 43:4748-4759, 1991. 66. A. Raymond, J. L. Robert, and C. Bernard, "The electron effective mass in heavily doped GaAs', J. Phys. C: Solid State Phys., 12:2289, 1979. 67. P. Harrison and R. W. Kelsall, '1.55um intersubband pumping of an In0.53Ga0.47As/AlAs:InP symmetric double quantum well terahertz laser', Physica E, 2:468 472, 1998. 68. J. H. Smet, L. H. Peng, Y. Hirayama, and C. G. Fonstad, 'Electron intersubband transitions to 0.8 eV (1.55 um) in InGaAs/AlAs single quantum wells', Appl. Phys. Lett., 64:986, 1994. 69. W. J. Duffin, Electricity and Magnetism, McGraw-Hill, Third edition, 1980. 70. C. M. Snowden, Ed., Semiconductor Device Modelling, Springer-Verlag, 1988. 71. C. M. Snowden and R. E. Miles, Eds., Compound Semiconductor Device Modelling, Springer-Verlag, 1993.
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