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72. P. H. Ladbrooke, MMIC design: GaAs FETs and HEMTs, Artech House, 1989. 73. J. M. Golio, Microwave MESFETs and HEMTs, Artech House, 1991. 74. E. H. Li, Ed., Selected Papers on Quantum Well Intermixing for Photonics, SPIE Optical engineering press, Bellingham, 1998. 75. A. Fick, ', Ann. Phys., 170:59, 1855. 76. W. D. Callister Jr., Materials Science and Engineering, John Wiley and Sons, Inc., New York, 1985. 77. P. Harrison, W. E. Hagston, and T. Stirner, 'Excitons in diffused quantum wells', Phys. Rev. B, 47:16404-16409,1993. 78. Nguyen The Khoi P. Kossacki, J. A. Gaj, G. Karczewski, T. Wojtowicz, E. Janik, A. Zakrzewski, M.Kutrowski, and J. Kossut, 'Rapid thermal processing of semimagnetic superstructures studied by magnetoreflectivity', Superlatt. Microstructures, 16:63,1994. 79. M. T. Furtado and M. S. S. Loural, 'Direct evaluation of interdiffusion coefficients in quantum well heterostructures usinfg photoluminescence', Superlatt. Microstruct., 14:21, 1993. 80. D. Tonnies, G. Bacher, A. Forchel, A. Waag, and G. Landwehr, 'Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing', Appl. Phys. Lett., 64:766, 1994. 81. J. Crank, The Mathematics of Diffusion, Oxford University Press, London, 1956. 82. P. Shewmon, Diffusion in Solids, McGraw-Hill, New York, 1963. 83. B. Tuck, 'Some explicit solutions to the non-linear diffusion equation', J. Phys. D: Appl. Phys., 9:123,1976. 84. D. Shaw, 'Diffusion mechanisms in II-VI materials', Journal of Crystal Growth, 86:778, 1988. 85. K. Binder, 'Atomistic modeling of materials properties by Monte-Carlo simulation', Advanced Materials, 4:540,1992. 86. P. Harrison, 'Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells', Semicond. Sci. Technol, 11:1022-1025,1996. 87. J. M. Fatah, I. Karla, P. Harrison, T. Stirner, W. E. Hagston, and J. H. C. Hogg, 'Defect induced diffusion mechanisms in ion implanted quantum well structures', in The Proceedings of the 22nd International Conference on the Physics of Semiconductors, Singapore, 1994, pp. 2275-2278, World Scientific. 88. I. Karla, D. Shaw, W. E. Hagston, J. H. C. Hogg, S. Chalk, J. E. Nicholls, and C. Peili, 'Measurement of interdiffusion in II-VI quantum-well structures using optical methods', J. Appl. Phys., 79:1895, 1996. 89. I. Karla, J. H. C. Hogg, W. E. Hagston, J. Fatah, and D. Shaw, 'Monitoring of intermixing and interdiffusion by x-ray diffraction of ion-implanted quantum-well structures', J. Appl. Phys., 79:1898,1996. 90. B. Elman, E. S. Koteles, P. Melman, and C. A. Armiento, 'GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing', J. Appl. Phys., 66:2104, 1989.
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91. M. K. Chai, S. F. Wee, K. P. Homewood, W. P. Gillin, T. Cloitre, and R. L. Aulombard, 'An optical study of interdiffusion in ZnSe/ZnCdSe', Appl. Phys. Lett., 69:1579, 1996. 92. I. V. Bradley, W. P. Gillin, K. P. Homewood, and R. P. Webb, "The effects of ion implantation on the interdiffusion coefficients in In1 xGaxAs/GaAs quantum well structures', J. Appl. Phys., 73:1686, 1993. 93. M. A. Litovskii and R. SH. Malkovich, 'Method of determining the diffusion profile for a concentration dependent diffusion coefficient', phys. stat. sol. (a), 36:K145, 1976. 94. A. D. Pelton and T. H. Etsell, 'Analytical solution of Pick's second law when the diffusion coefficient varies directly as concentration', Acta Metallurgica, 20:1269, 1972. 95. F. C. Frank and D. Turnbull, ', Phys. Rev., 104:617, 1956. 96. T. Taskin, S. Gardelis, J. H. Evans, B. Hamilton, and A. R. Peaker, 'Sharp 1.54 um luminescence from porous erbium implanted silicon', Electronics Letters, 31:2132,1995. 97. J. F. Ziegler, J. P. Bierrack, and U. Littmark, The Stopping and Range of Ions in Matter, vol. 1, Pergamon Press, 1985. 98. P. Harrison, 'Numerical solution to the general one-dimensional diffusion equation in semiconductor heterostructures', phys. stat. sol. (b), 197:81-90, 1996. 99. J. M. Fatah, P. Harrison, T. Stirner, J. H. C. Hogg, and W. E. Hagston, 'Double crystal X-ray diffraction simulation of diffusion in semiconductor microstructures', J. Appl. Phys., 83:4037 4041, 1998. 100. E. F. Schubert, Ed., Delta-doping of Semiconductors, Cambridge University Press, Cambridge, 1996. 101. S. M. Sze, Semiconductor Devices: Physics and Technology, Wiley, New York, 1985. 102. P. Harrison, Fei Long, and W. E. Hagston, 'Empirical pseudo-potential calculation of the in-plane effective masses of electron and holes of two-dimensional excitons in CdTe quantum wells', Superlatt. Microstruct., 19:123-130, 1996. 103. C. Mailhiot, Yia-Chung Chang, and T. C. McGill, 'Energy spectra of donors in GaAs/Ga1 xAlx As quantum well structures in the effective mass approximation', Phys. Rev. B, 26:4449, 1982. 104. R. L. Greene and K. K. Bajaj, 'Energy levels of hydrogenic impurity states in GaAsGa 1 x As x As quantum well structures', Solid State Commun., 45:825, 1983. 105. G. N. Carneiro, G. Weber, and L. E. Oliveira, 'Binding energies and intra-donor absorption spectra in GaAs-GaAlAs quantum wells', Semicond. Sci. Technol, 10:41, 1995. 106. S. Chaudhuri and K. K. Bajaj, 'Effect of non-parabolicity on the energy levels of hydrogenic donors in GaAs-Ga1 xALxAs quantum-well structures', Phys. Rev. B, 29:1803, 1984. 107. Chong ru Huo, Ben-Yuan Gu, and Lei Gu, 'General variational expressions for the calculation of the binding eneries of anisotropic donor states in stepped quantum wells', J. Appl. Phys., 70:4357, 1991. 108. R. G. Roberts, P. Harrison, and W. E. Hagston, 'The symmetry of donor bound electron wavefunctions in quantum wells', Superlatt. Microstruct., 23:289-296, 1998. 109. W. E. Hagston, P. Harrison, and T. Stirner, 'Neutral donors and spin-flip Raman spectra in dilute magnetic semiconductor microstructures', Phys. Rev. B, 49:8242-8248, 1994.
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